x1001-qk 18.0-21.0/36.0-42.0 ghz doubler and power amplifier, qfn, 7x7mm integrated doubler and power amplifier excellent saturated output stage +25.0 dbm output power 50.0 dbc fundamental suppression features electrical characteristics (ambient temperature t = 25 o c) parameter input frequency range (fin) output frequency range (fout) input return loss (s11) output return loss (s22) fundamental rejection rf input power (rf pin) output power at 0.0 dbm pin (pout) drain supply voltage (vd1) doubler drain supply voltage (vd2) buffer amp drain supply voltage (vd3,4,5,6) pa gate supply voltage (vg1) doubler drain supply current (id1) doubler drain supply current (id2) buffer drain supply current (id3,4,5,6) (vg=-0.7v typical) pa units ghz ghz db db dbc dbm dbm v v v v ma ma ma min. 18.0 36.0 - - - - - - - - - - - - typ. - - tbd 12.0 50.0 0.0 +26.0 2.5 3.0 4.5 -1.2 <1.0 20 530 max. 21.0 42.0 - - - - - 3.0 4.0 5.5 - - 25 600 absolute maximum ratings supply voltage (vd) supply current (id) gate bias voltage (vg) input power (rf pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.0 vdc 800 ma +0.3 vdc tbd -65 to +165 o c -55 to mttf table mttf table page 1 of 5 1 (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 1 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2006 - rev 04-oct-06 mimix broadband's 18.0-21.0/36.0-42.0 ghz gaas doubler integrates a doubler, a buffer amplifier and 4-stage power amplifier. the device provides better than +25.0 dbm output power and has excellent fundamental rejection. the device comes in a 7x7mm qfn package that is rohs compliant. this device is well suited for millimeter-wave point-to-point radio, lmds, satcom and vsat applications. general description
18.0-21.0/36.0-42.0 ghz doubler and power amplifier, qfn, 7x7mm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. measured performance at nominal conditions page 2 of 5 xx1001-qk, pout (dbm) 0 5 10 15 20 25 30 34 36 38 40 42 44 rf out [= 2xfin] (ghz) pout (dbm) pin = 0 dbm pin = 3 dbm pin = 6 dbm pin = 9 dbm xx1001-qk, fundamental leakage (dbm) -45 -40 -35 -30 -25 -20 -15 -10 -5 0 17 18 19 20 21 22 fin (ghz) fundamental leakage (dbm) pin = 0 dbm pin = 3 dbm pin = 6 dbm pin = 9 dbm x1001-qk october 2006 - rev 04-oct-06
18.0-21.0/36.0-42.0 ghz doubler and power amplifier, qfn, 7x7mm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. page 3 of 5 physical dimensions functional schematic pin designations (note: engineering designator is 20dbl0832) x2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 21 20 19 18 17 16 15 28 27 26 25 24 23 22 rf in rf out gnd gnd gnd gnd buffer amp pa vg1 vd1 vg3 vg4 vg5 vg6 vg2 vd2 vd3 vd4 vd5 vd6 pin number pin name pin function nominal value units 3 gnd ground 4 rf in rf input 5 gnd ground 9 vg1 gate bias (doubler) -1.2 volts 10 vd1 drain bias (doubler) 2.5 volts 11 vg2 gate bias (buffer amp) -1.2 volts 12 vg3 gate bias (pa) -1.2 volts 13 vg4 gate bias (pa) -1.2 volts 14 vg5 gate bias (pa) -1.2 volts 14 vg6 gate bias (pa) -1.2 volts 17 gnd ground 18 rf out output rf 19 gnd ground 22 vd6 drain bias (pa) 4.5 volts 23 vd5 drain bias (pa) 4.5 volts 24 vd4 drain bias (pa) 4.5 volts 25 vd3 drain bias (pa) 4.5 volts 26 vd2 drain bias (buffer amp) 3 volts 27 vg2 gate bias (pa) -1.2 volts x1001-qk october 2006 - rev 04-oct-06
18.0-21.0/36.0-42.0 ghz doubler and power amplifier, qfn, 7x7mm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. page 4 of 5 app note [1] biasing - it is recommended to separately bias each amplifier stage vd1 through vd6 at vd1=2.5v, vd2=3.0v, vd(3,4,5,6)=4.5v with id1<1ma, id2=20ma, id3=40ma, id4=70ma, id5=150ma, id6=270ma. separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the effective gate control voltage. as shown in the bonding diagram, it is possible to parallel stages vd(3,4,5) with id(3,4,5)=260ma while maintaining satisfactory performance. for non-critical applications it is possible to para llel stages vd(3,4,5,6) together and adjust the common gate voltage vg(3,4,5,6) for total drain current id(total)=530ma. it is also recommended to use active biasing to keep the currents constant as the rf power and temperature vary; this gives the most reproducible results. depending on the su pply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifi er, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct dra in current and thus drain voltage. the typical gate voltage needed to do this is -0.7v. typically the gate is protected with silicon diodes to lim it the applied voltage. also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. mttf tables recommended layout mttf is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate. xx1001-qk, mttf (yrs) vs. backplate temperature (c) 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 55 65 75 85 95 temperature (c) mttf (years) x1001-qk october 2006 - rev 04-oct-06
18.0-21.0/36.0-42.0 ghz doubler and power amplifier, qfn, 7x7mm mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. page 5 of 5 caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. package attachment - this packaged product from mimix broadband is provided as a rugged surface mount package compatible with high volume solder installation. the package is a low-cost plastic package. vacuum tools or other suitable pick and place equipment may be used to pick and place this part. care should be taken to ensure that there are no voids or gaps in the solder connection so that good rf, dc and ground connections are maintained. voids or gaps can eventually lead not only to rf performance degradation, but reduced reliability and life of the product due to thermal stress. mimix lead-free rohs compliant program - mimix has an active program in place to meet customer and governmental requirements for eliminating lead (pb) and other environmentally hazardous materials from our products. all mimix rohs complian t components are form, fit and functional replacements for their non-rohs equivalents. lead plating of our rohs compliant parts i s 100% matt tin (sn) over copper alloy and is backwards compatible with current standard snpb low-temperature reflow processes as well as higher temperature (260c reflow) ?pb free? processes. XX1001-QK-0L00 ni/pd/au plated rohs compliant qfn 7x7 28l surface mount package in bulk quantity xx1001-qk-0l0t ni/pd/au plated rohs compliant qfn 7x7 28l surface mount package in tape and reel xx1001-qk-ev1 xx1001-qk evaluation module we also offer this part with alternative plating options. please contact your regional sales manager for more information regar ding different plating types. reflow profile ramp up rate activation time and temperature time above melting point max peak temperature time within 5 oc of peak ramp down rate snpb 3-4 oc/sec 60-120 sec @ 140-160 oc 60-150 sec 240 oc 10-20 sec 4-6 oc/sec pb free 3-4 oc/sec 60-180 sec @ 170-200 oc 60-150 sec 265 oc 10-20 sec 4-6 oc/sec x1001-qk october 2006 - rev 04-oct-06
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